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International Journal of Research in Mechanical and Materials Engineering

Volume 1, Issue 1, 2015
Mcmed International
International Journal of Research in Mechanical and Materials Engineering
Issn
XXX-XXXX (Print), XXXX-XXXX (Online)
Frequency
bi-annual
Email
editorijrmme@mcmed.us
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Abstract
Title
SURFACE MORPHOLOGY AND PHOTOLUMINESCENCE PROPERTIES OF A- GaAs:Zn SOLAR CELLS
Author
Hussein Kh. Rasheed1*, Ramiz Ahmed Al- Anssar2, Iman Kadhim Jebur2
Email
ww5xxw@gmail.com
keyword
a- GaAs:Zn thin films, surface morphology, photoluminescence proprties
Abstract
GaAs:Zn films with 0.5μm have been prepared by flash evaporation technique on glass and c-Si substrate at substrate room temperature under vacuum of 10-5 mbar. These films have been annealed at different annealing temperatures Ta (373and 473) K. The surface morphological characteristics by atomic force microscope (AFM), was decrease in roughness with increasing annealing temperature and the grain size increases with increasing annealing temperature. The PL peak located at (888.714), (883.059) and (880.419) for (RT, 011 ,200)C which corresponding to an energy (1.400), (1.404) and (1.408) eV. This may be associated with that the electron in bottom of Ec recombins with hole in the Ev. I-V Measurements of HJ in the dark case to deduce that the value of ideality factor decreases with increasing of Ta. I-V characteristic Under illumination the Jsc & Voc increase with increasing of Ta.
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