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International Journal of Research in Mechanical and Materials Engineering

Volume 1, Issue 1, 2015
Mcmed International
International Journal of Research in Mechanical and Materials Engineering
Issn
XXX-XXXX (Print), XXXX-XXXX (Online)
Frequency
bi-annual
Email
editorijrmme@mcmed.us
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Abstract
Title
EFFECT OF ANNEALING TEMPERATURE ON STRUCTURAL AND ELECTRICAL PROPERTIES OF A-GAAS:SE FILMS
Author
Hussein Kh.Rasheed and Dhuha imad
Email
ww5xxw@gmail.com
keyword
GaAs:Se Films, Flash Evaporation Technique.
Abstract
GaAs:Se films with thickness 0.25,0.5,0.75 and1 μm have been prepared by flash evaporation technique on glass substrate and silicon under vacuum of 10-5mbar. These films have been annealed at different temperatures Ta ( 373 , 473)K. The structural characteristic of GaAs:Se have been studied by using x-ray diffraction which show that the film have amorphous structure up to 473K, after that the crystallinity is improved. The d.c conductivity for all deposited films decreases with increases of annealing temperatures while the electrical activation energies (Ea1 and Ea2) increase with increasing of annealing temperature. Carrier concentration and Hall mobility have been determined from Hall measurements a-GaAs:Se thin films Hall measurements show that all these films have a negative Hall coefficient (n-type charge carriers).
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